<?xml version="1.0" encoding="UTF-8"?>
<rss xmlns:dc="http://purl.org/dc/elements/1.1/" version="2.0">
<channel>
<title>Dr. Achintya Singha</title>
<link>http://192.168.1.40:8080/xmlui/handle/123456789/1332</link>
<description/>
<pubDate>Sun, 31 May 2026 10:40:39 GMT</pubDate>
<dc:date>2026-05-31T10:40:39Z</dc:date>
<item>
<title>Optical anisotropy of electronic excitations in elliptical quantum dots</title>
<link>http://192.168.1.40:8080/xmlui/handle/123456789/1693</link>
<description>Optical anisotropy of electronic excitations in elliptical quantum dots
Singha, Achintya; Pellegrini, Vittorio; Kalliakos, Sokratis; Karmakar, Biswajit; Pinczuk, Aron; Pfeiffer, Loren N.; West, Ken W.
The authors report that anisotropic confining potentials in laterally coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of intershell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geometrical shape of the QDs. These experiments show that the tuning of the QD confinement potential offers a powerful method to manipulate electronic states and far-infrared intershell optical transitions in QDs.
DOI: 10.1063/1.3080658
</description>
<pubDate>Mon, 16 Feb 2009 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://192.168.1.40:8080/xmlui/handle/123456789/1693</guid>
<dc:date>2009-02-16T00:00:00Z</dc:date>
</item>
<item>
<title>Probing collective modes of correlated states of few electrons in semiconductor quantum dots</title>
<link>http://192.168.1.40:8080/xmlui/handle/123456789/1691</link>
<description>Probing collective modes of correlated states of few electrons in semiconductor quantum dots
Kalliakos, S.; Rontani, M.; Pellegrini, V.; Pinczuk, A.; Singha, Achintya; Garcia, C. P.; Goldoni, G.; Molinari, E.; Pfeiffer, L. N.; West, K. W.
Low-lying collective excitations above highly correlated ground states of few interacting electrons confined in GaAs semiconductor quantum dots are probed by resonant inelastic light scattering. We highlight that separate studies of the changes in the spin and charge degrees of freedom offer unique access to the fundamental interactions. The case of quantum dots with four electrons is found to be determined by a competition between triplet and singlet ground states that is uncovered in the rich light scattering spectra of spin excitations. These light scattering results are described within a configuration-interaction framework that captures the role of electron correlation with quantitative accuracy. Recent light scattering results that reveal the impact of anisotropic confining potentials in laterally coupled quantum dots are also reviewed. In these studies, inelastic light scattering methods emerge as powerful probes of collective phenomena and spin configurations in quantum dots with few electrons.
DOI: 10.1016/j.ssc.2009.04.034
</description>
<pubDate>Tue, 01 Sep 2009 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://192.168.1.40:8080/xmlui/handle/123456789/1691</guid>
<dc:date>2009-09-01T00:00:00Z</dc:date>
</item>
<item>
<title>Engineering artificial graphene in a two-dimensional electron gas</title>
<link>http://192.168.1.40:8080/xmlui/handle/123456789/1690</link>
<description>Engineering artificial graphene in a two-dimensional electron gas
Gibertini, M.; Singha, Achintya; Pellegrini, Vittorio; Polini, Marco; Vignale, Giovanni; Pinczuk, Aron; Pfeiffer, Loren N.; West, Ken W.
At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity, which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphenelike system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultrahigh-mobility electrons with linearly dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.
DOI: 10.1103/PhysRevB.79.241406
</description>
<pubDate>Mon, 01 Jun 2009 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://192.168.1.40:8080/xmlui/handle/123456789/1690</guid>
<dc:date>2009-06-01T00:00:00Z</dc:date>
</item>
<item>
<title>Correlated electrons in optically tunable quantum dots: Building an electron dimer molecule</title>
<link>http://192.168.1.40:8080/xmlui/handle/123456789/1338</link>
<description>Correlated electrons in optically tunable quantum dots: Building an electron dimer molecule
Singha, Achintya; Pellegrini, Vittorio; Pinczuk, Aron; Pfeiffer, Loren N.; West, Ken W.; Rontani, Massimo
We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we identify the intershell excitations in the one-electron regime and the distinct spin and charge modes in the interacting few-body configuration. In the case of two electrons, a comparison with configuration-interaction calculations allows us to link the observed excitations with the breathing mode of the molecular dimer and to determine the singlet-triplet energy splitting.
DOI: 10.1103/PhysRevLett.104.246802
</description>
<pubDate>Tue, 15 Jun 2010 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://192.168.1.40:8080/xmlui/handle/123456789/1338</guid>
<dc:date>2010-06-15T00:00:00Z</dc:date>
</item>
</channel>
</rss>
