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dc.contributor.authorAgrawal, Lata
dc.contributor.authorSingh, Bhrigunandan Prasad
dc.contributor.authorSinha, Tripurari Prasad
dc.date.accessioned2012-11-06T09:48:44Z
dc.date.available2012-11-06T09:48:44Z
dc.date.issued2010-12-01
dc.identifierFOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.inen_US
dc.identifier.citationAgrawal L, Singh B P and Sinha T P (201 0) Dielectric Relaxation in Complex Perovskite Oxide ln(C0112Ti 112)03, Integrated Ferroelectrics, 118,696-705.en_US
dc.identifier.issn1058-4587
dc.identifier.issn1607-8489en_US
dc.identifier.uri1. Full Text Link ->
dc.identifier.urihttp://www.tandfonline.com/doi/abs/10.1080/10584587.2010.489463en_US
dc.identifier.uri=================================================en_US
dc.identifier.uri2. Scopus : Citation Link ->en_US
dc.identifier.urihttp://www.scopus.com/record/display.url?eid=2-s2.0-79952858939&origin=resultslist&sort=plf-f&src=s&st1=Dielectric+Relaxation+in+Complex+Perovskite+Oxide&st2=sinha%2ct+p&sid=39DVfT7CEB2Y1kzOfl1dwPf%3a550&sot=b&sdt=b&sl=98&s=%28TITLE-ABS-KEY-AUTH%28Dielectric+Relaxation+in+Complex+Perovskite+Oxide%29+AND+AUTHOR-NAME%28sinha%2ct+p%29%29&relpos=11&relpos=11&searchTerm=%28TITLE-ABS-KEY-AUTH%28Dielectric%20Relaxation%20in%20Complex%20Perovskite%20Oxide%29%20AND%20AUTHOR-NAME%28sinha,t%20p%29%29en_US
dc.descriptionDOI: 10.1080/10584587.2010.489463en_US
dc.description.abstractThe frequency-dependent dielectric relaxation of indium-cobalt-titanate [In(Co1/2Ti1/2)O3] (ICT) ceramic, synthesized by a solid-state reaction technique is investigated by alternating-current impedance spectroscopy. The X-ray diffraction of the sample at room temperature shows a monoclinic phase. An analysis of ϵ′ and tanδ with frequency is performed assuming a distribution of relaxation times. The activation energy calculated from the frequency dependence of loss spectra is found to be 0.59 eV. The frequency-dependent conductivity spectra follow the power law. The Cole-Cole approach is used to explain the relaxation mechanism in ICT. The scaling behaviour of imaginary part of electric modulus (M″) suggests that the relaxation describes the same mechanism at various temperatures.en_US
dc.language.isoenen_US
dc.publisherTaylor & Francisen_US
dc.subjectIn(Co1/2Ti1/2)O3en_US
dc.subjectChemical synthesisen_US
dc.subjectDielectric propertiesen_US
dc.titleDielectric Relaxation in Complex Perovskite Oxide In(Co1/2Ti1/2)O3en_US
dc.title.alternativeIntegrated Ferroelectrics: An International Journalen_US
dc.typeArticleen_US


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