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dc.contributor.authorGibertini, M.
dc.contributor.authorSingha, Achintya
dc.contributor.authorPellegrini, Vittorio
dc.contributor.authorPolini, Marco
dc.contributor.authorVignale, Giovanni
dc.contributor.authorPinczuk, Aron
dc.contributor.authorPfeiffer, Loren N.
dc.contributor.authorWest, Ken W.
dc.date.accessioned2012-12-03T05:56:27Z
dc.date.available2012-12-03T05:56:27Z
dc.date.issued2009-06-01
dc.identifierFOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.inen_US
dc.identifier.citationGibertini M, Singha A, Pellegrini V, Polini M, Vignale G, Pinczuk A, Pfeiffer L N, West K W (2009) "Engineering artificial graphene in a two-dimensional electron gas", Phys. Rev. B Rapid Communication, 79, 241406 R.en_US
dc.identifier.issn1098-0121
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dc.identifier.urihttp://www.scopus.com/record/display.url?eid=2-s2.0-68949108477&origin=resultslist&sort=plf-f&src=s&st1=Engineering+artificial+graphene+in+a+two-dimensional+electron+gas&st2=singha%2ca&sid=C5FED4059220165A37B568E5C97C4FAC.Vdktg6RVtMfaQJ4pNTCQ%3a40&sot=b&sdt=b&sl=108&s=%28TITLE-ABS-KEY%28Engineering+artificial+graphene+in+a+two-dimensional+electron+gas%29+AND+AUTHOR-NAME%28singha%2ca%29%29&relpos=0&relpos=0&searchTerm=%28TITLE-ABS-KEY%28Engineering+artificial+graphene+in+a+two-dimensional+electron+gas%29+AND+AUTHOR-NAME%28singha%2Ca%29%29#en_US
dc.descriptionDOI: 10.1103/PhysRevB.79.241406en_US
dc.description.abstractAt low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity, which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphenelike system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultrahigh-mobility electrons with linearly dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.en_US
dc.language.isoenen_US
dc.publisherAMER PHYSICAL SOCen_US
dc.subjectelectron mobilityen_US
dc.subjectFermi levelen_US
dc.subjectgallium arsenideen_US
dc.subjectgrapheneen_US
dc.subjectIII-V semiconductorsen_US
dc.subjecttwo-dimensional electron gasen_US
dc.titleEngineering artificial graphene in a two-dimensional electron gasen_US
dc.title.alternativePHYSICAL REVIEW Ben_US
dc.typeArticleen_US


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