| dc.contributor.author | Kumar, A. | |
| dc.contributor.author | Rafique, S. M. | |
| dc.contributor.author | Sinha, Tripurari Prasad | |
| dc.date.accessioned | 2013-02-14T11:13:00Z | |
| dc.date.available | 2013-02-14T11:13:00Z | |
| dc.date.issued | 2008-10-01 | |
| dc.identifier | FOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.in | en_US |
| dc.identifier.citation | Kumar Ashwani, Rafique S M and Sinha T P (2008) "Electronic transport, density of states and ground state properties of Li-In binary alloy", Physica B, 403, 3374-33 78. | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.uri | 1.Full Text Link -> | |
| dc.identifier.uri | http://ac.els-cdn.com/S0921452608002044/1-s2.0-S0921452608002044-main.pdf?_tid=ecaf2d0c-7698-11e2-91fc-00000aab0f6c&acdnat=1360841175_08790cd4b89dd0766f621a9f27165435 | en_US |
| dc.identifier.uri | ================================================= | en_US |
| dc.identifier.uri | 2. Scopus : Citation Link -> | en_US |
| dc.identifier.uri | http://www.scopus.com/record/display.url?eid=2-s2.0-55349126070&origin=resultslist&sort=plf-f&src=s&st1=Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy&st2=sinha%2ct.+p.&sid=407BA675C5A6ED8C5A0278F67E1B9300.N5T5nM1aaTEF8rE6yKCR3A%3a110&sot=b&sdt=b&sl=134&s=%28TITLE-ABS-KEY%28Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy%29+AND+AUTHOR-NAME%28sinha%2ct.+p.%29%29&relpos=0&relpos=0&searchTerm=%28TITLE-ABS-KEY%28Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy%29+AND+AUTHOR-NAME%28sinha%2Ct.+p.%29%29 | en_US |
| dc.description | DOI: 10.1016/j.physb.2008.04.036 | en_US |
| dc.description.abstract | The electronic transport properties of Li-In binary alloy have been studied by Harrison's first principle pseudopotential technique. The Percus-Yevik hard sphere model is used to compute the partial structure factors Sij/(k) for the alloy at the desired composition. We have also calculated the ground state properties of Li-In alloy employing full-potential linearized augmented plane wave (FLAPW) method. The equilibrium values of bulk modulus and its pressure derivative have been estimated through optimization of the crystal structure of the Li-In alloy. The calculated total density of states (DOS) and the partial DOS around the Fermi energy are used to explain the variation of resistivity of the alloy with carrier concentration. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | ELSEVIER SCIENCE BV | en_US |
| dc.subject | Li-In alloy | en_US |
| dc.subject | Harrison's first principle | en_US |
| dc.subject | Pseudopotential | en_US |
| dc.subject | Electronic structure calculations | en_US |
| dc.title | Electronic transport, density of states and ground state properties of Li- In binary alloy | en_US |
| dc.title.alternative | PHYSICA B-CONDENSED MATTER | en_US |
| dc.type | Article | en_US |