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dc.contributor.authorKumar, A.
dc.contributor.authorRafique, S. M.
dc.contributor.authorSinha, Tripurari Prasad
dc.date.accessioned2013-02-14T11:13:00Z
dc.date.available2013-02-14T11:13:00Z
dc.date.issued2008-10-01
dc.identifierFOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.inen_US
dc.identifier.citationKumar Ashwani, Rafique S M and Sinha T P (2008) "Electronic transport, density of states and ground state properties of Li-In binary alloy", Physica B, 403, 3374-33 78.en_US
dc.identifier.issn0921-4526
dc.identifier.uri1.Full Text Link ->
dc.identifier.urihttp://ac.els-cdn.com/S0921452608002044/1-s2.0-S0921452608002044-main.pdf?_tid=ecaf2d0c-7698-11e2-91fc-00000aab0f6c&acdnat=1360841175_08790cd4b89dd0766f621a9f27165435en_US
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dc.identifier.uri2. Scopus : Citation Link ->en_US
dc.identifier.urihttp://www.scopus.com/record/display.url?eid=2-s2.0-55349126070&origin=resultslist&sort=plf-f&src=s&st1=Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy&st2=sinha%2ct.+p.&sid=407BA675C5A6ED8C5A0278F67E1B9300.N5T5nM1aaTEF8rE6yKCR3A%3a110&sot=b&sdt=b&sl=134&s=%28TITLE-ABS-KEY%28Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy%29+AND+AUTHOR-NAME%28sinha%2ct.+p.%29%29&relpos=0&relpos=0&searchTerm=%28TITLE-ABS-KEY%28Electronic+transport+density+of+states+and+ground+state+properties+of+Li-In+binary+alloy%29+AND+AUTHOR-NAME%28sinha%2Ct.+p.%29%29en_US
dc.descriptionDOI: 10.1016/j.physb.2008.04.036en_US
dc.description.abstractThe electronic transport properties of Li-In binary alloy have been studied by Harrison's first principle pseudopotential technique. The Percus-Yevik hard sphere model is used to compute the partial structure factors Sij/(k) for the alloy at the desired composition. We have also calculated the ground state properties of Li-In alloy employing full-potential linearized augmented plane wave (FLAPW) method. The equilibrium values of bulk modulus and its pressure derivative have been estimated through optimization of the crystal structure of the Li-In alloy. The calculated total density of states (DOS) and the partial DOS around the Fermi energy are used to explain the variation of resistivity of the alloy with carrier concentration.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectLi-In alloyen_US
dc.subjectHarrison's first principleen_US
dc.subjectPseudopotentialen_US
dc.subjectElectronic structure calculationsen_US
dc.titleElectronic transport, density of states and ground state properties of Li- In binary alloyen_US
dc.title.alternativePHYSICA B-CONDENSED MATTERen_US
dc.typeArticleen_US


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