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dc.contributor.authorPrasad, S.
dc.contributor.authorPrasad, K.
dc.contributor.authorChoudhary, S. N.
dc.contributor.authorSinha, Tripurari Prasad
dc.date.accessioned2013-03-20T05:52:03Z
dc.date.available2013-03-20T05:52:03Z
dc.date.issued2005-07-15
dc.identifierFOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.inen_US
dc.identifier.citationPrasad S. Prasad K, Chaudhary S Nand Sinha T P (2005) Electrical behaviour of 0.80Pb[(Mg,Zn)11 3 Ta213l0,-0.20PbTi03 relaxor, Physica B 364, 206-212.en_US
dc.identifier.issn0921-4526
dc.identifier.uri1.Full Text Link ->
dc.identifier.urihttp://ac.els-cdn.com/S0921452605007076/1-s2.0-S0921452605007076-main.pdf?_tid=b64b104e-9120-11e2-b6f0-00000aacb362&acdnat=1363758225_7005bc4153c8032f4b85b3687b907781en_US
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dc.identifier.uri2. Scopus : Citation Link ->en_US
dc.identifier.urihttp://www.scopus.com/record/display.url?eid=2-s2.0-20344395342&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=76C79A53CEA66A2F18D066CDF6DB744E.CnvicAmOODVwpVrjSeqQ%3a940&sot=aut&sdt=a&sl=43&s=AU-ID%28%22Sinha%2c+Tripurari+Prasad%22+7005594850%29&relpos=112&relpos=12&searchTerm=AU-ID%28\%26quot%3BSinha%2C+Tripurari+Prasad\%26quot%3B+7005594850%29en_US
dc.descriptionDOI: 10.1016/j.physb.2005.04.014en_US
dc.description.abstractPolycrystalline 0.80Pb[(Mg2/3Zn1/3)(1/3)Ta-2/3]O-3-0.20PbTiO(3) (PMZT-PT) having a tetragonal perovskite type structure was prepared by the high temperature solid-state reaction method. Dielectric studies showed the relaxor behaviour with diffuse phase transition. High value of epsilon(m) > 8000 was realized with T-m (phase transition temperature) at 57 degrees C at 1 kHz. The frequency dependence of T-m has been modeled using Vogel Fulcher relation. The dielectric relaxation in the present system was found analogous to the magnetic relaxation in spin-glass system. Complex impedance analysis indicated the system undergoing a polydispersive non-Debye type dielectric relaxation. The relaxation behaviour in PMZT-PT was also probed through admittance spectroscopy.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectrelaxor ferroelectricsen_US
dc.subjectdiffuse phase transitionen_US
dc.subjectdielectric propertiesen_US
dc.subjectdielectric relaxationen_US
dc.titleElectrical behaviour of 0.80Pb[(Mg,Zn)1/3Ta2/3]O 3-0.20PbTiO3 relaxoren_US
dc.title.alternativePhysica B: Condensed Matteren_US
dc.typeArticleen_US


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