Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
Abstract
We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions
URI
1. Full Text Link ->http://apl.aip.org/resource/1/applab/v97/i13/p132113_s1
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2. Scopus : Citation Link ->
http://www.scopus.com/record/display.url?eid=2-s2.0-77957653063&origin=resultslist&sort=plf-f&src=s&st1=Delocalized-localized+transition+in+a+semiconductor+two-dimensional+honeycomb+lattice&st2=Singha+A%2c&sid=Gup-eMFE8KBBtOHbMIKegRl%3a370&sot=b&sdt=b&sl=119&s=%28ALL%28Delocalized-localized+transition+in+a+semiconductor+two-dimensional+honeycomb+lattice%29+AND+AUTHOR-NAME%28Singha+A%2c%29%29&relpos=1&relpos=1&searchTerm=%28ALL%28Delocalized-localized%20transition%20in%20a%20semiconductor%20two-dimensional%20honeycomb%20lattice%29%20AND%20AUTHOR-NAME%28Singha%20A,%29%29