| dc.contributor.author | De Simoni, G. | |
| dc.contributor.author | Singha, Achintya | |
| dc.contributor.author | Gibertini, M. | |
| dc.contributor.author | Karmakar, B. | |
| dc.contributor.author | Polini, M. | |
| dc.contributor.author | Piazza, V. | |
| dc.contributor.author | Pfeiffer, L. N. | |
| dc.contributor.author | West, K. W. | |
| dc.contributor.author | Beltram, F. | |
| dc.contributor.author | Pellegrini, V. | |
| dc.date.accessioned | 2012-11-12T07:11:09Z | |
| dc.date.available | 2012-11-12T07:11:09Z | |
| dc.date.issued | 2010-09-27 | |
| dc.identifier | FOR ACCESS / DOWNLOAD PROBLEM -- PLEASE CONTACT LIBRARIAN, BOSE INSTITUTE, akc@bic.boseinst.ernet.in | en_US |
| dc.identifier.citation | Simoni G. De, Singha A, Gibertini M, Karmakar B, Polini M, Piazza V, Pfeiffer L. N, West K. W, Beltram F and Pellegrini V (201 0) Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice,Appl. Phys. Lett. 97, 132113. | en_US |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | 1. Full Text Link -> | |
| dc.identifier.uri | http://apl.aip.org/resource/1/applab/v97/i13/p132113_s1 | en_US |
| dc.identifier.uri | ================================================= | en_US |
| dc.identifier.uri | 2. Scopus : Citation Link -> | en_US |
| dc.identifier.uri | http://www.scopus.com/record/display.url?eid=2-s2.0-77957653063&origin=resultslist&sort=plf-f&src=s&st1=Delocalized-localized+transition+in+a+semiconductor+two-dimensional+honeycomb+lattice&st2=Singha+A%2c&sid=Gup-eMFE8KBBtOHbMIKegRl%3a370&sot=b&sdt=b&sl=119&s=%28ALL%28Delocalized-localized+transition+in+a+semiconductor+two-dimensional+honeycomb+lattice%29+AND+AUTHOR-NAME%28Singha+A%2c%29%29&relpos=1&relpos=1&searchTerm=%28ALL%28Delocalized-localized%20transition%20in%20a%20semiconductor%20two-dimensional%20honeycomb%20lattice%29%20AND%20AUTHOR-NAME%28Singha%20A,%29%29 | en_US |
| dc.description | DOI: 10.1063/1.3493189 | en_US |
| dc.description.abstract | We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | AMER INST PHYSICS | en_US |
| dc.relation.uri | JOURNAL LINK : | en_US |
| dc.subject | LATERAL SURFACE SUPERLATTICES | en_US |
| dc.subject | QUANTUM SIMULATORS | en_US |
| dc.subject | ULTRACOLD ATOMS | en_US |
| dc.subject | ELECTRON-GAS | en_US |
| dc.subject | MAGNETORESISTANCE | en_US |
| dc.title | Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice | en_US |
| dc.title.alternative | APPLIED PHYSICS LETTERS | en_US |
| dc.type | Article | en_US |
